絶縁材料形成用組成物の製造方法、絶縁材料形成用組成物およびこれを用いた絶縁膜

Method for producing composition for forming insulating material, composition for forming insulating material and insulating film using the same

Abstract

【課題】 低い誘電率かつ高い機械的強度を有する絶縁膜を形成可能な絶縁材料形成用組成物を提供する。 【解決手段】 一般式(1)で表される化合物、その加水分解およびその縮合物から選ばれる少なくとも1種以上のシラン化合物を、置換または無置換のアンモニウム塩存在下で加水分解、縮合して得られる化合物を含有する絶縁材料形成用組成物の製造方法。 【化1】 一般式(1)中、X 1 は、加水分解性基を表し、R 1 は、アルキル基、アリール基又はヘテロ環基を表し、n 1 は1〜3の整数を表し、m 1 は2以上の整数を表す。L 1 は単結合または2価の連結基を表し、Aは、かご型構造を含有する基を表す。 【選択図】 なし
<P>PROBLEM TO BE SOLVED: To provide a composition for insulating materials, capable of forming insulating films having low dielectric constants and high mechanical strengths. <P>SOLUTION: The method for producing the composition used for insulating materials and comprising a compound obtained by hydrolyzing and condensing at least one silane compound selected from a compound represented by general formula (1) [X<SP>1</SP>is a hydrolysable group; R<SP>1</SP>is an alkyl, an aryl or a heterocyclic group; (n<SB>1</SB>) is an integer of 1 to 3; (m<SB>1</SB>) is an integer of ≥2; L<SP>1</SP>is a single bond or a divalent bonding group; A is a group containing a cage type structure], its hydrolysate and its condensation product in the presence of a substituted or non-substituted ammonium salt. <P>COPYRIGHT: (C)2006,JPO&NCIPI

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Cited By (2)

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    US-8864898-B2October 21, 2014Honeywell International Inc.Coating formulations for optical elements
    US-8901268-B2December 02, 2014Ahila Krishnamoorthy, Richard Spear, Amanuel GebrebrhanCompositions, layers and films for optoelectronic devices, methods of production and uses thereof